Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances

J.L. (Skip) Egley; Anne Vandooren; Brian Winstead; Eric Verret; Chip Workman; Bruce White; Bich-Yen Nguyen

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Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances

机译：超薄全耗尽SOI中源极/漏极升高与扩展扩展的比较，包括BEOL通过电容的影响

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Raised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension versus the S/D, will depend upon the maximum achievable mobility in the structure at a 60 nm physical gate length. We also study the effects of minimum BEOL via spacing on performance, and its consequence on choosing a raised extension or S/D.

机译：为了提高饱和电流，必须增加全耗尽型SOI中的源极/漏极（S / D）或提高其延伸范围，因为非常薄的薄膜会增加电阻。我们证明了提高扩展对S / D的选择将取决于在60 nm物理栅极长度下结构中可实现的最大迁移率。我们还研究了最小BEOL通过间距对性能的影响，以及它对选择凸起扩展或S / D的影响。

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来源
《Solid-State Electronics》 |2004年第9期|p.1607-1612|共6页
作者
J.L. (Skip) Egley; Anne Vandooren; Brian Winstead; Eric Verret; Chip Workman; Bruce White; Bich-Yen Nguyen;
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作者单位

Advanced Product Research and Development Lab, Motorola Inc. MD: EL722, Tempe, AZ 85284, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
fully depleted SOI; FDSOI; raised SD extension; raised S/D;

机译：SOI完全耗尽;FDSOI;SD扩展提高;S / D升高;

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1. Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs [J] . Xia An, Ru Huang, Xing Zhang, Solid-State Electronics . 2005,第3期

机译：降低源极/漏极（LSD）和升高源极/漏极（RSD）超薄体（UTB）SOI MOSFET的比例
2. A15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications [J] . Chang-Hyun Park, Myung-Hwan Oh, Hee-Sung Kang, ETRI journal . 2004,第6期

机译：A15 nm超薄体SOI CMOS器件，具有双提升的源极/漏极，适用于90 nm模拟应用
3. A 15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications [J] . Chang-Hyun Park, Myung-Hwan Oh, Hee-Sung Kang, ETRI journal . 2004,第6期

机译：15纳米超薄体SOI CMOS器件，具有双提升的源极/漏极，适用于90 nm模拟应用
4. OPTIMIZATION OF ULTRA-THIN BODY,FULLY-DEPLETED-SOI DEVICE,WITH RAISED SOURCE/DRAIN [C] . J.L.(Skip) Egley, Anne Vandooren, Brian Winstead, The Meeting of the Electrochemical Society . 2003

机译：优化超薄车身，全耗尽-SOI装置，带凸起源/排水管
5. Design, fabrication, and characterization of tungsten/silicon germanium/silicon raised single source/drains for sub-100nm CMOS and sub-70nm fully self-aligned double-gated CMOS [D] . Gan, Dong 2000

机译：低于100nm CMOS和低于70nm完全自对准双栅极CMOS的钨/硅锗/硅凸起单源/漏极的设计，制造和表征
6. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021

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7. Floating Body DRAM with Body Raised and Source/Drain Separation [O] . Gino Giusi 2021

机译：浮体DRAM与身体凸起和源/排水分离
8. COMPARISON OF EXPERIMENTAL AND THEORETICAL NORMAL-FORCE DISTRIBUTIONS (INCLUDING REYNOLDS NUMBER EFFECTS ON AN OGIVE-CYLINDER BODY AT MACH NUMBER 1.08 [R] . Edward W. Perkins, Leland H. Jorgensen 1956

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Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances

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