首页> 外国专利> THIN-FILM SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND THIN-FILM ELECTRONIC DEVICE

THIN-FILM SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND THIN-FILM ELECTRONIC DEVICE

机译:薄膜半导体器件,其制造方法,光电器件,电子设备以及薄膜电子器件

摘要

PROBLEM TO BE SOLVED: To increase the withstand voltage and reduce the off-leakage current, for example, in a thin-film semiconductor device, such as TFT.;SOLUTION: The thin-film semiconductor device comprises a semiconductor film which contains a channel region, a source region, and a drain region, and has an insular flat pattern, a gate insulating film laminated on or under the semiconductor film, and a gate electrode which is arranged facing the channel region via the gate insulating film. The gate insulating film is locally formed thick in a first portion pinched in between the layers of a peripheral region of the insular flat pattern of the semiconductor film and of the gate electrode.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:例如在诸如TFT之类的薄膜半导体器件中,为了增加耐压并减小截止漏电流;解决方案:该薄膜半导体器件包括具有沟道的半导体膜。区域,源极区域和漏极区域,并具有岛状的平面图案,层叠在半导体膜之上或之下的栅极绝缘膜,以及隔着栅极绝缘膜与沟道区域相对配置的栅极电极。栅绝缘膜在第一部分中局部地厚形成,该第一部分夹在半导体膜的岛状平面图案的外围区域和栅电极的外围区域的层之间。COPYRIGHT:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006108149A

    专利类型

  • 公开/公告日2006-04-20

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20040288700

  • 发明设计人 TAKENAKA SATOSHI;EGUCHI TSUKASA;

    申请日2004-09-30

  • 分类号H01L21/336;H01L29/786;G02F1/1368;G09F9/30;G09F9/35;

  • 国家 JP

  • 入库时间 2022-08-21 21:52:48

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