首页> 外国专利> Thin film light emitting diode with current-dispersing structure has transverse conductivity of current dispersion layer increased by forming two-dimensional electron or hole gas

Thin film light emitting diode with current-dispersing structure has transverse conductivity of current dispersion layer increased by forming two-dimensional electron or hole gas

机译:具有电流分散结构的薄膜发光二极管通过形成二维电子或空穴气体而增加了电流分散层的横向电导率

摘要

The device has an active layer (7) that emits electromagnetic radiation (19) in a main radiation direction (15), a current dispersion layer (9) of a first nitride compound semiconductor material, a main surface (14) for coupling out the radiation emitted in the main radiation direction and a first contact layer (11,12) arranged on the main surface. The transverse conductivity of the current dispersion layer is increased by forming a two-dimensional electron or hole gas.
机译:该装置具有在主辐射方向(15)上发射电磁辐射(19)的有源层(7),第一氮化物化合物半导体材料的电流扩散层(9),用于耦合出主辐射面的主表面(14)。沿主辐射方向发射的辐射和布置在主表面上的第一接触层(11,12)。通过形成二维电子或空穴气体来增加电流分散层的横向导电率。

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