首页>
外国专利>
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING RESIDUES OF CONDUCTIVE MATERIAL DUE TO MOAT
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING RESIDUES OF CONDUCTIVE MATERIAL DUE TO MOAT
展开▼
机译：制造用于防止导电物质残留的半导体装置的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Purpose: it is a kind of to be arranged to prevent the residue of a conductive material due to moat by improving the profile of the edge portion in an isolated area for manufacturing the method for semiconductor device, use a low reduction part of a pad oxide layer. Construction: a pad oxide layer (32) and a pad nitride mode (34) are formed in semi-conductive substrate (30). The one of one pad oxide layer is low, and reduction part is formed by executing isotropic etching on substrate. One bar ditch (36) form pad nitride mode as an etching mask by execution anisotropic etching in substrate purposes.
展开▼
