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SURFACE TREATMENT METHOD, METHOD OF MANUFACTURING SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER TO RESTRAIN AUTO-DOPE, PARTICLES AND CRACKS
SURFACE TREATMENT METHOD, METHOD OF MANUFACTURING SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER TO RESTRAIN AUTO-DOPE, PARTICLES AND CRACKS
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机译：表面处理方法，制造硅表皮晶片的方法和硅表皮晶片以抑制自掺杂，颗粒和裂纹
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摘要
PURPOSE: A surface treatment method, a method of manufacturing a silicon epitaxial wafer and the silicon epitaxial wafer are provided to restrain auto-dope, particles and cracks from being generated on a main surface of a silicon single crystal substrate and to maintain simultaneously a high growth-speed for the main surface of the substrate by immersing the substrate into an HF solution in a protecting state of a silicon oxide layer. CONSTITUTION: A silicon oxide layer(15) is formed at a backside of a silicon single crystal substrate(10) by using a CVD(Chemical Vapor Deposition). After covering the silicon oxide layer, an HF treatment is performed by immersing the substrate into an HF solution.
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