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Method of and platen for controlling removal rate characteristics in chemical mechanical planarization

机译:化学机械平面化中控制去除速率特性的方法和压板

摘要

Methods and a platen control parameters of a removal rate characteristic in chemical mechanical planarization, while allowing a low-cost polishing pad to be used especially in fast edge operations, and while reducing the amount of fluid used to support the polishing pad. Platen configuration provides fluid pressure control to reduce leakage of fluid from beneath the polishing pad, and contributes to control of a location of an inflection point of the removal rate characteristic. Another configuration controls a shape of a section of the removal rate characteristic between the inflection point and a leading wafer edge.
机译:化学机械平面化中的去除速率特性的方法和压板控制参数,同时允许特别是在快速边缘操作中使用低成本的抛光垫,同时减少用于支撑抛光垫的流体量。压板构造提供流体压力控制,以减少流体从抛光垫下方的泄漏,并且有助于控制去除速率特性的拐点的位置。另一种配置控制拐点和晶片前缘之间的去除速率特性的部分的形状。

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