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Ultra low-cost uncooled infrared detector arrays in CMOS
Ultra low-cost uncooled infrared detector arrays in CMOS
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机译：CMOS中的超低成本非制冷红外探测器阵列
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摘要
Micromachined, CMOS p+-active/n-well diodes are used as infrared sensing elements in uncooled Focal Plane Arrays (FPA). The FPAs are fabricated using a standard CMOS process followed by post-CMOS bulk-micromachining steps without any critical lithography or complicated deposition processes. Micromachining steps include Reactive Ion Etching (RIE) to reach the bulk silicon and anisotropic silicon wet etching together with electrochemical etch-stop technique to obtain thermally isolated p+-active/n-well diodes. The FPAs are monolithically integrated with their readout circuit since they are fabricated in any standard CMOS technology.
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机译：微加工的CMOS p + 有源/ n阱二极管在未冷却的焦平面阵列（FPA）中用作红外传感元件。 FPA是使用标准CMOS工艺制造的，其后是CMOS后批量微加工步骤，没有任何关键的光刻或复杂的沉积工艺。微加工步骤包括反应离子刻蚀（RIE）到达体硅和各向异性硅湿法刻蚀以及电化学刻蚀停止技术以获得热隔离的p + -有源/ n阱二极管。由于FPA是用任何标准CMOS技术制造的，因此与它们的读出电路单片集成。
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