MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides

• 1. 一种在金刚石衬底上沉积高C轴取向氮化铝薄膜的方法 [P] . 中国专利： CN112760604A . 2021-05-07
• 2. 在柔性衬底上沉积高c轴取向氮化铝薄膜的方法 [P] . 中国专利： CN104498883B . 2017.06.16
• 3. MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides [P] . 美国专利： US2005069643A1 . 2005-03-31

  机译： 在In2O3氧化物上MOCVD选择性沉积C轴取向PB5GE3O11薄膜

• 4. MOCVD SELECTIVE DEPOSITION OF C-AXIAL PB5GE3O11 THIN FILM ON HIGH-K GATE OXIDE [P] . 日本专利： JP2005019976A . 2005-01-20

  机译： 高K氧化物上C轴PB5GE3O11薄膜的MOCVD选择性沉积。

• 5. MOCVD selective deposition of C-axis oriented PB₅GE₃O₁₁ thin films on In₂O₃ oxides [P] . 美国专利： US7157111B2 . 2007-01-02

  机译： 在In _{2 O 5 GE 3 O 11 薄膜> 3 氧化物}

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• 3. In vitro dissolution and mechanical behavior of c-axis preferentially oriented hydroxyapatite thin films fabricated by pulsed laser deposition [O] . Hyunbin Kim, Renato P. Camata, Shafiul Chowdhury, -1
• 4. Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material : Physics and technology of high-k gate dielectrics 5 [O] . Lopes J. M. J., Roeckerath M., Schlom D. G., 2007

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