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MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
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机译:在In 2 Sub> O 5 Sub> GE 3 Sub> O 11 Sub>薄膜> 3 Sub>氧化物
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摘要
A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; annealing the structure; selectively depositing a ferroelectric layer by MOCVD; annealing the structure; and completing the ferroelectric device.
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