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Gallium arsenide / aluminum gallium arsenide photocell with environmentally sealed ohmic contact grid and method of manufacturing the cell
Gallium arsenide / aluminum gallium arsenide photocell with environmentally sealed ohmic contact grid and method of manufacturing the cell
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机译：具有环境密封的欧姆接触栅的砷化镓/砷化铝镓光电电池及其制造方法
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摘要
A photocell (40) includes a photovoltaic or otherwise photosensitive layer structure (44) on which a passivation or window layer (52) of an environmentally sensitive material such as aluminum gallium arsenide (AlGaAs) and an antireflection (AR) coating (54) are formed. An electrically conductive cap layer (60) delineated in a front contact grid configuration sealingly extends through the AR coating (54) to the window layer (52). An ohmic metal contact (64) is evaporated over and seals the cap layer (60) and the contiguous areas of the AR coating (54). The contact grid interface at which the cap layer (60) contacts the window layer (52) is sealed by the AR coating (54) and the contact (64). The photocell (40) is fabricated by forming, delineating and etching the cap layer (60), forming the AR coating (54) and then forming the contact (64) by evaporation of metal. IMAGE
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