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A METHOD OF GROWING A BUFFER LAYER USING MOLECULAR BEAM EPITAXY
A METHOD OF GROWING A BUFFER LAYER USING MOLECULAR BEAM EPITAXY
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机译：一种使用分子束外延生长缓冲层的方法
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摘要
A method of growing a Group III-V nitride buffer layer on a substrate made of a different material by molecular beam epitaxy is provided, which compensates for lattice mismatching between a material of the substrate and a material of a further layer to be grown on the substrate. The method includes the steps of: placing the substrate in a vacuum chamber at a reduced pressure suitable for epitaxial growth and at an elevated temperature; and supplying species to the vacuum chamber to be used in the epitaxial growth including a nitrogen precursor species supplying nitrogen to the substrate to cause epitaxial growth on the substrate of the buffer layer. The elevated temperature is in the range of 300 to 800 °C, and a supply rate of nitrogen to the substrate is such as to cause epitaxial growth on the substrate of the Group III-V nitride buffer layer of uniform thickness less than 2000 Å at a growth rate in the range of 2 to 10 νm/hr.
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