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首页> 外文会议>Symposium L on nitrides and related wide band gap materials of the E-MRS conference >Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers
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Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

机译：缓冲层对分子束外延生长GaN层结构性质的影响

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The influence of low temperature buffer layers on the structural characteristics of GaN grown by molecular beam epitaxy on sapphire (0001) substrates was investigated. Layers grown on GaN and AlN buffers were studied by high-resolution X-ray diffraction and transmission electron microscopy (TEM). For both buffer materials, the variation of the buffer parameters, like their thickness and growth temperature, is reflected in a clear change of the GaN (0002) rocking curve width. For strongly decreased as well as for increased Bragg reflection width a deterioration of optical and electrical properties of GaN layers grown on buffers with respect to reference samples without buffer layers was observed. Moreover, layers grown on thin GaN buffer layers show extremely narrow omega scans and layer thickness interferences in 2 theta / omega direction, while TEM reveals a high defect density throughout the entire layer. Therefore, not only the width of the rocking curves but also their shape has to be considered for the estimation of the defect densities by X-ray diffraction.
机译：研究了低温缓冲层对Sapphire（0001）衬底上的分子束外延生长的GaN结构特征的影响。通过高分辨率X射线衍射和透射电子显微镜（TEM）研究了GaN和ALN缓冲液上生长的层。对于两个缓冲材料，缓冲参数的变化，如它们的厚度和生长温度，在GaN（0002）摇摆曲线宽度的透明变化中反映。对于强烈降低以及增加的布拉格反射宽度，观察到在缓冲器上相对于没有缓冲层的参考样品生长的GaN层的光学和电性能的劣化。此外，在薄的GaN缓冲层上生长的层显示出极窄的ω扫描和层厚度干扰，在2个/Ω方向上，而TEM在整个层中露出高缺陷密度。因此，不仅通过X射线衍射估计其形状的摇摆曲线的宽度，而且还必须考虑它们的缺陷密度。

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