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Semiconductor device made from silicon carbide with a schottky contact and an ohmic contact made from a nickel-aluminum material and process for producing the semiconductor device
Semiconductor device made from silicon carbide with a schottky contact and an ohmic contact made from a nickel-aluminum material and process for producing the semiconductor device
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机译:由具有由镍铝材料制成的肖特基接触和欧姆接触的碳化硅制成的半导体器件及其制造方法
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摘要
The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.
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