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Electrochemical etching cell for etching silicon wafers uses electrode materials that do not contaminate and/or damage the etching body after etching
Electrochemical etching cell for etching silicon wafers uses electrode materials that do not contaminate and/or damage the etching body after etching
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机译：用于蚀刻硅片的电化学蚀刻池使用的电极材料在蚀刻后不会污染和/或损坏蚀刻体
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摘要
The first and second electrode material are selected so that the etching body (15) is not contaminated and/or not damaged after etching through the electrode materials. Electrochemical etching cell for etching an etching body having a surface of etching material comprises a chamber partially filled with an electrolyte and contains a first electrode (13) with a surface made of first electrode material and a second electrode (13') with a surface made of a second electrode material. One of the electrodes is connected as anode and the other as cathode. The etching body is in contact with the electrolyte. The first and second electrode material are selected so that the etching body (15) is not contaminated and/or not damaged after etching through the electrode materials.
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