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Semiconductor laser device having a two-dimensional photonic bandgap structure

机译:具有二维光子带隙结构的半导体激光装置

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device widely used as a light source for optical information processing and optical fiber communication, and more particularly to a semiconductor laser device having a two-dimensional optical bandgap structure, An upper cladding layer and a cap layer are stacked in this order on the lower cladding layer, and a two-dimensional photonic bandgap region is formed from the cap layer to a certain depth of the lower cladding layer The present invention relates to a semiconductor laser device having a two-dimensional photonic bandgap structure.
机译:半导体激光装置技术领域本发明涉及一种广泛用作光信息处理和光纤通信的光源的半导体激光装置,尤其涉及一种具有二维光学带隙结构的半导体激光装置。 ,在下覆盖层上依次层叠上覆盖层和覆盖层,从覆盖层到下覆盖层的一定深度形成二维光子带隙区域。具有二维光子带隙结构的激光装置。

著录项

  • 公开/公告号KR19990001408A

    专利类型

  • 公开/公告日1999-01-15

    原文格式PDF

  • 申请/专利权人 윤종용;

    申请/专利号KR19970024721

  • 发明设计人 김종렬;

    申请日1997-06-14

  • 分类号H01S3/18;

  • 国家 KR

  • 入库时间 2022-08-22 02:18:21

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