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Semiconductor laser device having a two-dimensional photonic bandgap structure
Semiconductor laser device having a two-dimensional photonic bandgap structure
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机译:具有二维光子带隙结构的半导体激光装置
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摘要
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device widely used as a light source for optical information processing and optical fiber communication, and more particularly to a semiconductor laser device having a two-dimensional optical bandgap structure, An upper cladding layer and a cap layer are stacked in this order on the lower cladding layer, and a two-dimensional photonic bandgap region is formed from the cap layer to a certain depth of the lower cladding layer The present invention relates to a semiconductor laser device having a two-dimensional photonic bandgap structure.
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