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METHOD FOR MAKING QUANTOM FINE-WELL USING GaAs/AIGaAs SUBSTRATE
METHOD FOR MAKING QUANTOM FINE-WELL USING GaAs/AIGaAs SUBSTRATE
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机译：利用GaAs / AlGaAs基体制备量子精细阱的方法
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摘要
The quantum fine line manufacturing method is comprised of the step of (a) growing AlGaAs layer(20) on a GaAs substrate(10), then forming a photoresist mask(30) for digging a V-groove in [011 direction on the AlGaAs layer(20) by means of the photolithography, the step of (b) etching with etching solution which has volume ratio of H2SO4:H2O2:H2O=1:2:40 to form the V-groove, the step of (c) growing a plurality of GaAs(50) and AlGaAa(40) layers by means of the epitaxial growth method on the substrate where the V-groove is formed to form the quantum fine line(QWRs) in the center of the V-groove. Here, a side quantum well(side-MQWL) is formed in both sides of the quantum fine line simultaneously and a top quantum well(top-MQWL) is formed in the outside of the V-groove simultaneously.
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机译：量子细线制造方法包括以下步骤：（a）在GaAs衬底（10）上生长AlGaAs层（20），然后在AlGaAs上形成用于在[011方向上挖V形槽的光致抗蚀剂掩模（30）。借助于光刻法在层（20）上进行以下步骤：（b）用具有H 2 SO 4 ∶H 2 O 2 ∶H 2 O ＝ 1∶2∶40的体积比的蚀刻溶液进行蚀刻以形成V形槽;（c）生长的步骤通过外延生长法在形成V形沟槽的衬底上形成多个GaAs（50）和AlGaAa（40）层，以在V形沟槽的中心形成量子细线（QWR）。在此，在量子细线的两侧同时形成侧量子阱（side-MQWL），并且在V形槽的外部同时形成顶部量子阱（top-MQWL）。
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