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A gain-variable amplifier circuit using the turn-on resistance characteristic of NMOS transistor

机译:利用NMOS晶体管的导通电阻特性的增益可变放大器电路

摘要

In the present invention, when various internal characteristics such as PSRR, CMRR, CMR, and offset of a general operational amplifier are used for various purposes such as signal amplification and current driving capability, The present invention relates to a gain variable amplifier circuit capable of adjusting a gain by varying a voltage applied to a gate of an operational amplifier having differential amplifier means, gain means and compensation means, And a feedback resistor between the terminal and the output terminal is constituted by connecting an N-MOS transistor having a variable turn-on resistance according to a difference in gate applied voltage to a variable turn-on resistance of the N-MOS transistor.
机译:在本发明中,当各种内部特性例如PSRR,CMRR,CMR和通用运算放大器的偏移被用于诸如信号放大和电流驱动能力的各种目的时,本发明涉及一种能够实现以下目的的增益可变放大器电路:通过改变施加到具有差分放大器装置,增益装置和补偿装置的运算放大器的栅极上的电压来调节增益,并且通过连接具有可变匝数的N-MOS晶体管来构成端子和输出端子之间的反馈电阻器。导通电阻取决于N-MOS晶体管的可变导通电阻与栅极施加电压之差。

著录项

  • 公开/公告号KR970019000A

    专利类型

  • 公开/公告日1997-04-30

    原文格式PDF

  • 申请/专利权人 김광호;

    申请/专利号KR19950030052

  • 发明设计人 김승주;

    申请日1995-09-14

  • 分类号H03G3/00;

  • 国家 KR

  • 入库时间 2022-08-22 03:17:53

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