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Carbon-free hydrogen silsesquioxane with dielectric constant less than 3. 2 annealed in hydrogen for integrated circuits
Carbon-free hydrogen silsesquioxane with dielectric constant less than 3. 2 annealed in hydrogen for integrated circuits
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机译:集成电路中氢气退火的无碳氢倍半硅氧烷,介电常数小于3. 2
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摘要
An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing is provided. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.
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