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Carbon-free hydrogen silsesquioxane with dielectric constant less than 3. 2 annealed in hydrogen for integrated circuits

机译:集成电路中氢气退火的无碳氢倍半硅氧烷,介电常数小于3. 2

摘要

An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing is provided. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.
机译:提供一种绝缘体,该绝缘体用于覆盖包含通过固化可流动的氧化物层并退火而形成的半导体器件的半导体衬底上的其表面中的互连布线水平。在氢和铝的存在下进行退火以获得氧化物层的介电常数至低于3.2的值。还提供了使用固化和退火的可流动氧化物在相邻装置之间的电绝缘。在这种情况下,退火可以在有或没有铝存在的情况下在氢气中进行。

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