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The protective circuit for a mosfet, which in an inductive load switches.

机译:Mosfet的保护电路,在感性负载下切换。

摘要

A snubber circuit comprising two stages regulates the gate current of a MOSFET in relation to the drain voltage at turnoff to clamp transient inductive voltages to a nondestructive level. At the onset of the turnoff, a current source is activated to discharge the gate capacitance, and the snubber controls the magnitude of such current in relation to the sensed drain voltage to stabilize the drain voltage at a nondestructive level. When the drain voltage approaches its limit value, a current injection circuit supplies additional current to the gate to sustain the MOSFET conduction, again in relation to the sensed drain voltage. When the inductive energy stored in the load is substantially dissipated, the drain voltage falls; at such point, the current injection circuit is disabled and the conduction of the current source is increased to complete the turnoff of the MOSFET.
机译:包括两级的缓冲电路可在关断时相对于漏极电压调节MOSFET的栅极电流,以将瞬态感应电压钳位到无损电平。在关断开始时,电流源被激活以使栅极电容放电,并且缓冲电路相对于感测到的漏极电压控制这种电流的大小,以将漏极电压稳定在非破坏性水平。当漏极电压接近其极限值时,电流注入电路还会向栅极提供额外的电流,以维持MOSFET的导通状态,这再次与检测到的漏极电压有关。当负载中存储的感应能量基本消散时,漏极电压下降;在这一点上,电流注入电路被禁用,电流源的导通增加以完成MOSFET的关断。

著录项

  • 公开/公告号DE68913507T2

    专利类型

  • 公开/公告日1994-06-09

    原文格式PDF

  • 申请/专利权人 DELCO ELECTRONICS CORP US;

    申请/专利号DE1989613507T

  • 发明设计人 OSBORN DOUGLAS BRUCE US;

    申请日1989-12-20

  • 分类号H02H9/02;H02H7/20;F02P3/04;

  • 国家 DE

  • 入库时间 2022-08-22 04:35:15

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