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Cathode-ray dust chamber for high-frequency cathode-ray dust.

机译：阴极射线粉尘室，用于高频阴极射线粉尘。

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摘要

A sputtering chamber structure is used to effect a high-frequency bias sputtering process and includes target and semiconductor electrodes (13, 17), a metal protection plate (32) formed to surround said target (14) and having a first opening section (31) facing the front surface of the target (14), and a chamber (SR) for receiving the electrodes (13, 17) and the protection plate (32) and set in a reduced-pressure condition in the high-frequency bias sputtering process. In the sputtering chamber structure, the protection plate (32) further has a second opening section (33) which is formed separately from the first opening section (31) to decentralize a target power in the inner space defined by the protection plate (32) when the high-frequency bias sputtering process is effected in a state that the first opening section (31) is closed by the substrate electrode (17).

机译：溅射室结构用于实现高频偏置溅射工艺，并包括靶和半导体电极（13、17），形成为围绕所述靶（14）并具有第一开口部分（31）的金属保护板（32）。）面对着靶（14）的前表面，并有一个腔室（SR）用于容纳电极（13、17）和保护板（32），并在高频偏压溅射过程中处于减压状态。在溅射室结构中，保护板（32）还具有第二开口部（33），该第二开口部（33）与第一开口部（31）分开形成，以在由保护板（32）限定的内部空间中分散目标功率。当在第一开口部（31）被基板电极（17）封闭的状态下进行高频偏压溅射处理时。

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公开/公告号DE3885043D1

专利类型
公开/公告日1993-11-25

原文格式PDF
申请/专利权人 KABUSHIKI KAISHA TOSHIBA KAWASAKI KANAGAWA JP;
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申请/专利号DE19883885043T
发明设计人 KATSURA TOSHIHIKO PAT. DIV. K.K. TOSHIBA MINATO-KU TOKYO 105 JP;ABE MASAHIRO PAT. DIV. K.K. TOSHIBA MINATO-KU TOKYO 105 JP;
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申请日1988-08-24
分类号C23C14/34;C23C14/40;H01L21/30;
国家 DE
入库时间 2022-08-22 04:36:33

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