首页>
外国专利>
HEAT-TREATMENT OF SEMIINSULATING GALLIUM ARSENIDE SEMICONDUCTOR SINGLE CRYSTAL, SEMIINSULATING GALLIUM ARSENIDE SEMICONDUCTOR SINGLE CRYSTAL AND WAFER
HEAT-TREATMENT OF SEMIINSULATING GALLIUM ARSENIDE SEMICONDUCTOR SINGLE CRYSTAL, SEMIINSULATING GALLIUM ARSENIDE SEMICONDUCTOR SINGLE CRYSTAL AND WAFER
展开▼
机译：半绝缘砷化镓半导体单晶的热处理，半绝缘砷化镓半导体单晶和晶片的热处理
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE:To control intrinsic defect of crystal and to obtain high-quality gallium arsenide semiconductor single crystal even from any kind of crystal which has been produced via ordinary thermal itinerancy by successively performing a three-step heat-treating process in the specified conditions for produced semiinsulating gallium arsenide semiconductor single crystal. CONSTITUTION:Semiinsulating gallium arsenide semiconductor single crystal is heat- treated by the method described hereunder. In other words, the grown semiinsulating gallium arsenide semiconductor single crystal is heat-treated at the temp. exceeding 0.9 times of m.p. and then heat-treated at the temp. unexceeding 0.4 times of m.p. and furthermore heat-treated at the temp. not lower than 0.4 times of m.p. and also unexceeding 0.7 times thereof. The above-mentioned three-step heat treatment must be performed by fixing this gallium arsenide semiconductor single crystal at arbitrary one point in a range within the above temp. respectively. After this gallium arsenide semiconductor single crystal is stopped at this temp. region in an arbitrary time, it is preferable that the gallium arsenide semiconductor single crystal is economically cooled at the temp. lowering velocity as quick as possible by a method causing unnecessary defective reaction.
展开▼
