ADHESIVE BATH FOR MICROSTRUCTURES' PREPARATION ON SURFACE OF GALLIUM N-ARSENIDE WITH UTILIZATION OF HELIUM-NEON LASER

• 1. 不同偏角度砷化镓籽晶加工及砷化镓单晶的制备方法 [P] . 中国专利： CN113981523A . 2022-01-28
• 2. 用于制备砷化镓衬底的方法、砷化镓衬底及其用途 [P] . 中国专利： CN104969328B . 2020.07.10
• 3. ADHESIVE BATH FOR MICROSTRUCTURES' PREPARATION ON SURFACE OF GALLIUM N-ARSENIDE WITH UTILIZATION OF HELIUM-NEON LASER [P] . CS8806255A1 . 1990-05-14

  机译： 利用氦氖激光在砷化镓表面制备微结构的胶粘剂浴

• 4. ADHESIVE BATH FOR MICROSTRUCTURES' PREPARATION ON SURFACE OF GALLIUM N-ARSENIDE WITH UTILIZATION OF HELIUM-NEON LASER [P] . CS625588A1 . 1990-05-14

  机译： 利用氦氖激光在砷化镓表面制备微结构的胶粘剂浴

• 5. METHOD OF COMPONENTS' SURFACE ETCHING FOR MICROELECTRONIC AND OPTOELECTRONIC STRUCTURES PREPARATION OF GALLIUM N-ARSENIDE [P] . CS270018B1 . 1990-06-13

  机译： N-砷化镓的微电子和光电子结构的成分表面刻蚀方法

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• 8. Bactericidal Effect of 0.95-mW Helium-Neon and 5-mW Indium-Gallium-Aluminum-Phosphate Laser Irradiation at Exposure Times of 30, 60, and 120 Seconds on Photosensitized Staphylococcus aureus and Pseudomonas aeruginosa In Vitro [O] . Noelle A DeSimone, Cory Christiansen, David Dore 1999
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