study of process of silicon dioxide and silicon films and silicon on silicon nitrurede

• 1. 一种基于硅-二氧化硅-氮化硅结构的集成偏振分束器 [P] . 中国专利： CN113219587A . 2021-08-06
• 2. 碳包覆氮化碳/硅‑氮化硅/二氧化硅复合材料的制备方法及应用 [P] . 中国专利： CN104241618B . 2017.03.15
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  机译： 二氧化硅非线性光学薄膜的制造方法和二氧化硅非线性光学元件

• 4. PROCESS FOR THERMALLY DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE [P] . 欧洲知识产权局专利： EP0417202B1 . 1993-02-03

  机译： 将氮化硅和二氧化硅薄膜热沉积到基质上的过程

• 5. PROCESS FOR PLASMA DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE [P] . 欧洲知识产权局专利： EP0417170B1 . 1993-01-07

  机译： 等离子体沉积氮化硅和二氧化硅薄膜到基质上的过程

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• 1. iAb Initio/iMolecular Orbital Calculation for Optical and Electronic Properties Evaluation of Small and Medium Size Silicon Nano-Clusters Found in Silicon Rich Oxide Films [J] . Néstor David Espinosa Torres ,José Francisco Javier Flores Gracia ,José Alberto Luna López . 现代物理（英文） . 2013,第11期
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• 4. 富硅氮化硅及其硅量子点薄膜材料的制备及其特性研究 [A] . 张龙龙 . 2014