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Brief description of embodiments of a field effect transistor has a gate self - aligned, and transistor obtained by this
Brief description of embodiments of a field effect transistor has a gate self - aligned, and transistor obtained by this
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机译：场效应晶体管的实施例的简要描述具有栅极自对准，并且由此获得的晶体管
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摘要
A process allowing the position and the dimensions of the grid of a field-effect transistor as well as the gaps between source and grid, grid and drain to be fixed as early as the first masking operation. To this end, a mask is formed comprising source, grid and drain windows by using a first insulating or semi-insulating material then the three windows are filled by means of a second material. The ohmic source and drain contacts are deposited in the corresponding windows reopened by selective etching of the second material effected after masking the first part of the layer situated above the non-reopened window. Second selective etching after masking of the contacts allows a Schottky-type grid contact to be deposited.
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