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Brief description of embodiments of the opening of small size, the use of this process for the manufacture of a field effect transistors, a grid aligned submicronic, and transistors thus obtained
Brief description of embodiments of the opening of small size, the use of this process for the manufacture of a field effect transistors, a grid aligned submicronic, and transistors thus obtained
Of opening of small size, the use of this process for the manufacture of a field effect transistors, a grid aligned submicronic, and transistors thus obtained. / p & & p & the invention relates to a method of embodiment of the opening of small size and the use of this process for the manufacture of a field effect transistors, a grid aligned submicron 7a, as well as the transistors obtained according to this / p & & p & a general manner, the invention consists in - be etched pattern has an intermediate, which disappears after use. / p & & p & the invention finds its application in the field of electronic more specifically in the manufacture of semi-finished - conductors.
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