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Transverse junction strip laser with low threshold current - where layers of gallium aluminium arsenide and gallium arsenide are grown epitaxially on gallium arsenide substrate
Transverse junction strip laser with low threshold current - where layers of gallium aluminium arsenide and gallium arsenide are grown epitaxially on gallium arsenide substrate
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机译：具有低阈值电流的横向结带激光器-砷化镓铝和砷化镓层在砷化镓衬底上外延生长
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摘要
The semiconductor laser has a quasi-insulating substrate (30), covered by a semiconductor layer (12) of one conductivity type (a), followed by a semiconductor layer (14) of type (a) but with a narrow forbidden energy gap than layer (12). A third semiconductor layer (16) is also type (a) but with a wider forbidden energy gap than layer (14). Another semiconductor zone of opposite conductivity type (b) is formed in layers (12, 14, 16) to reach substrate (30) and to form pn-junctions or barrier layers in layers (12, 14, 16). The pn-junction in layer (14) is the light emitting zone, and electrodes are fitted on a layer of type (a) and a layer of type (b). Substrate (30) is pref. GaAs doped with Cr; and conductivity type (a) is pref. n-type. This laser has very low stray current and an improved behaviour of the stray current w.r.t. temp change.
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