Healing crystal lattice damage of silicon doped with phosphorus - by neutron irradiation involving tempering in atmos. contg. phosphorus

• 1. 掺磷单晶硅生产中防尘爆的抽真空方法及应用其的掺磷单晶硅生产方法 [P] . 中国专利： CN111172598A . 2020-05-19
• 2. 掺硼磷CZ硅棒及配料中硼、磷快速分析法 [P] . 中国专利： CN102081063A . 2011-06-01
• 3. Homogeneous doping of silicon semiconductors with phosphorus - by thermal neutron irradiation, using tempering to heal radiation damage [P] . 德国专利： DE2436490C3 . 1978-12-07

  机译： 通过热中子辐照，用回火来治愈辐射损伤，从而对硅半导体进行磷的均质掺杂

• 4. Homogeneous doping of silicon semiconductors with phosphorus - by thermal neutron irradiation, using tempering to heal radiation damage [P] . 德国专利： DE2436490B2 . 1978-04-13

  机译： 通过热中子辐照，用回火来治愈辐射损伤，从而对硅半导体进行磷的均质掺杂

• 5. Homogeneous doping of silicon semiconductors with phosphorus - by thermal neutron irradiation, using tempering to heal radiation damage [P] . 德国专利： DE2436490A1 . 1976-02-12

  机译： 通过热中子辐照，用回火来治愈辐射损伤，从而对硅半导体进行磷的均质掺杂

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• 6. Damage and Recovery in Electron Irradiated Silicon Heavily Doped with Phosphorus [R] . Carnes, C. P., DeAngelis, H. M., Penczer, R. E., 1970

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