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Homogeneous doping of silicon semiconductors with phosphorus - by thermal neutron irradiation, using tempering to heal radiation damage
Homogeneous doping of silicon semiconductors with phosphorus - by thermal neutron irradiation, using tempering to heal radiation damage
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机译：通过热中子辐照，用回火来治愈辐射损伤，从而对硅半导体进行磷的均质掺杂
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摘要
In the homogeneous doping of a weakly n-conducting Si semiconductor with P, in which a Si semiconductor, which is undoped or doped only so slightly that any inhomogeneity in this doping is not noticeable after P-doping, is irradiated with thermal neutrons until sufficient 30Si is converted to P to give the required P concn., the radiation damage in the Si crystal lattice is healed, after decay of the radioactivity, by tempering briefly above 1000 degrees C. This treatment permits subsequent diffusion of a Gp. III element pref. Ga, to be carried out successfully.
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