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Making doped epitaxial germanium layers with defined - reproducible electrical properties
Making doped epitaxial germanium layers with defined - reproducible electrical properties
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机译:制作具有确定的可复制电学特性的掺杂外延锗层
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摘要
Ensures minimum deviation of specific resistance from a desired resistance value as well as the elimination of instabilities regarded as the main cause for changes in specific resistance. Using an open reaction system for the disproportioning of the germanium halide, the invention provides system parameters selected in such a manner that the depositing of germanium is surface limited and the latent instabilities reduced this way to a minor value are reduced still further by subsequent heat treatment.
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