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Measurement of overlay and edge placement errors using electron beam column arrays

机译:使用电子束柱阵列测量覆盖和边缘放置误差

摘要

A method and system for performing measurements of multiple dies using an array of electron beam columns is presented herein. The wafer is scanned in a direction parallel to the die rows disposed on the wafer. The electron beam measurement rows are spatially separated in the column alignment direction. The wafer is scanned in a direction oriented at an oblique angle to the column alignment direction such that each electron beam column measures the same row of die features on a different die during the same wafer pass. The wafer is oriented relative to the array of electron beam rows by rotating the wafer, rotating electron beam rows, or both. In a further aspect, each measurement beam is deflected to correct the alignment error between each column and the corresponding die row to be measured and to correct the wafer positioning error reported by the wafer positioning system.
机译:这里介绍了一种用于使用电子束列阵列执行多个模具的测量的方法和系统。晶片在平行于设置在晶片上的管芯行的方向上扫描。电子束测量行在柱对准方向上在空间上分离。晶片以倾斜角度定向到柱对准方向的方向上扫描,使得在相同的晶片通过期间每个电子束柱测量在不同管芯上的相同行。通过旋转晶片,旋转电子束行或两者,晶片相对于电子束行阵列定向。在另一方面,每个测量光束偏转以校正每个列和要测量的相应管圈行之间的对准误差,并校正由晶片定位系统报告的晶片定位误差。

著录项

  • 公开/公告号KR102244577B1

    专利类型

  • 公开/公告日2021-04-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020197011960

  • 发明设计人 닐 마크;래스커 프랑크;

    申请日2017-09-21

  • 分类号H01L21/66;H01L21/67;

  • 国家 KR

  • 入库时间 2022-08-24 18:27:23

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