首页> 外国专利> Thin film transistor array substrate for high-resolution digital X-ray detector and high-resolution digital X-ray detector including the same

Thin film transistor array substrate for high-resolution digital X-ray detector and high-resolution digital X-ray detector including the same

机译:用于高分辨率数字X射线检测器和高分辨率数字X射线检测器的薄膜晶体管阵列基板,包括相同的高分辨率数字X射线检测器

摘要

Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same in which a photo-sensitivity is improved by increasing a fill factor, and interference between PIN diodes is minimized, and step coverage of the PIN diode is improved to improve stability of the PIN diode. To those ends, an area of the PIN diode is maximized, and a pixel electrode of the PIN diode is disposed inside the PIN layer. Further, a clad layer made of inorganic material is formed in an edge region and/or a contact hole region of the pixel electrode. Thus, a leakage current resulting from concentrating an electric field on a curved region may be minimized.
机译:公开了一种用于高分辨率数字X射线检测器的薄膜晶体管阵列基板和高分辨率数字X射线检测器,其包括通过增加填充因子来提高光敏性,以及销之间的干扰来提高光敏性。二极管最小化,提高了引脚二极管的步进覆盖,以提高引脚二极管的稳定性。对于那些端,引脚二极管的区域最大化,并且引脚二极管的像素电极设置在销层内。此外,由无机材料制成的包层层形成在像素电极的边缘区域和/或/或接触孔区域中。因此,可以最小化由弯曲区域上集中电场产生的漏电流。

著录项

  • 公开/公告号US11011665B2

    专利类型

  • 公开/公告日2021-05-18

    原文格式PDF

  • 申请/专利权人 LG DISPLAY CO. LTD.;

    申请/专利号US201916585520

  • 发明设计人 HANSEOK LEE;HYEJI JEON;

    申请日2019-09-27

  • 分类号H01L31/105;H01L31/0224;H01L31/115;H01L31/08;H01L27/146;H01L29/868;

  • 国家 US

  • 入库时间 2022-08-24 18:43:04

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