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N-TYPE GAN CRYSTAL, GAN WAFER, AND GAN CRYSTAL, GAN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
N-TYPE GAN CRYSTAL, GAN WAFER, AND GAN CRYSTAL, GAN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
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机译：N型GaN晶体，GaN晶片和GaN晶体，GaN晶片和氮化物半导体器件的生产方法
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摘要
If a GaN crystal having a (004) XRD rocking curve FWHM of 20 arcsec or less, which is equivalent to a GaN crystal grown by an ammonothermal method, can be grown by HVPE with excellent mass productivity, it is expected to contribute to development promotion and cost reduction of nitride semiconductor devices produced using a c-plane GaN wafer as a substrate. Provided is an n-type GaN crystal in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. This n-type GaN crystal has the two main surfaces each having an area of 3 cm2 or larger, and one of the two main surfaces can have a Ga polarity and be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, this n-type GaN crystal can have a diameter of 20 mm or larger.
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