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Manufacturing method of n-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device
Manufacturing method of n-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device
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机译：n型GaN晶体，GaN晶片和GaN晶体，GaN晶片和氮化物半导体器件的制造方法
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摘要
If a GaN crystal with a (004) XRD rocking curve FWHM of 20 arcsec or less, comparable to that of the GaN crystal grown by the amonothermal method, can be grown to HVPE with excellent mass production, a c-plane GaN wafer is used for the substrate. It is expected to contribute to the promotion of development of nitride semiconductor devices and reduction of cost. In the n-type GaN crystal, the donor impurity contained in the highest concentration is Ge, has a room temperature resistivity of less than 0.03 Ω·cm, and its XRD rocking curve FWHM is less than 20 arcsec. This n-type GaN crystal has two main surfaces each having an area of 3 cm 2 or more, and one of them is a Ga polarity, and the inclination with respect to the (0001) crystal plane may be 0 degrees or more and 10 degrees or less. Further, this n-type GaN crystal can have a diameter of 20 mm or more.
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