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N-type GaN crystal, Gan wafer, and method for manufacturing GaN crystal, Gan wafer and nitride semiconductor device
N-type GaN crystal, Gan wafer, and method for manufacturing GaN crystal, Gan wafer and nitride semiconductor device
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机译：N型GaN晶体，GaN晶片和制造GaN晶体，GaN晶片和氮化物半导体器件的方法
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摘要
Problem to be solved: if the GaN crystal having the XRD rocking curve FWHM of (004) XRD rocking curve FWHM which is equal to the GaN crystal grown by the amono thermal method can be grown by the HVPE excellent in mass productivity It is expected that it can contribute to the development promotion and cost reduction of nitride semiconductor devices produced using C-plane Gan wafers.The n-type GaN crystal contains a donor impurity containing the highest concentration of germanium and 0.03 Ω The (004) XRD rocking curve FWHM is less than 20 arcsec with room temperature resistivity below cm.The n-type GaN crystal has two main surfaces, each having an area of 3 cm. Sup. 2 or more, one of which is of GA polarity, and the inclination with respect to the (0001) crystal plane can be 0 ° or more or 10 degrees or less.Further, the n-type GaN crystal may have a diameter of more than 20 mm.Diagram
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