首页> 外国专利> Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay

Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay

机译:利用晶圆曝光延迟的实时反馈在光刻期间曝光后烘烤动态调整

摘要

A method of optimizing a lithographic process for semiconductor fabrication includes determining that a semiconductor wafer experienced a photoresist exposure delay. At least one operating parameter of a post exposure baking process is adjusted based on the semiconductor wafer having experienced the photoresist exposure delay. The post exposure baking process is performed on the semiconductor wafer utilizing the adjusted at least one operating parameter.
机译:优化半导体制造光刻工艺的方法包括确定半导体晶片经历了光致抗蚀剂曝光延迟。基于具有经历光致抗蚀剂曝光延迟的半导体晶片来调节曝光后烘焙过程的至少一个操作参数。利用调整后的至少一个操作参数,在半导体晶片上执行曝光后烘焙过程。

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