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Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay

机译:利用实时反馈对晶圆曝光延迟进行光刻期间曝光后烘烤的动态调整

摘要

A method of optimizing a lithographic process for semiconductor fabrication includes determining that a semiconductor wafer experienced a photoresist exposure delay. At least one operating parameter of a post exposure baking process is adjusted based on the semiconductor wafer having experienced the photoresist exposure delay. The post exposure baking process is performed on the semiconductor wafer utilizing the adjusted at least one operating parameter.
机译:一种优化用于半导体制造的光刻工艺的方法,包括确定半导体晶片经历了光刻胶曝光延迟。基于经历了光致抗蚀剂曝光延迟的半导体晶片来调节曝光后烘烤工艺的至少一个操作参数。利用调整后的至少一个操作参数对半导体晶片执行曝光后烘烤工艺。

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