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Method for simulating transistor characteristic, simulation method of characteristic of electronic circuit including transistor, and simulation program of transistor characteristic
Method for simulating transistor characteristic, simulation method of characteristic of electronic circuit including transistor, and simulation program of transistor characteristic
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机译：晶体管特性模拟晶体管特性，仿真方法，包括晶体管的晶体管特性和仿真程序
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摘要
Problem to be solved: to provide a simulation method of the characteristics of the transistor to reproduce the measurement result better.The simulation method isA voltage is applied between the gate electrode and the semiconductor layer of the transistor until the trapped charge in the channel reaches a thermal equilibrium state of chargeIt is the process of obtaining the charge amount QT of the transient trap charge.The time QT of the charge QT isAs a function of superimposing multiple exponential functions with mutually different time constantsThe process of obtaining the charge amount QT.Diagram
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