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METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS
METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS
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机译：形成金属有机钨的方法，用于线路（MOL）应用
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摘要
Methods for forming organometallic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, the substrate comprising a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising an organometallic tungsten precursor to form a tungsten barrier layer on top of the dielectric layer and within the feature, wherein the temperature of the process chamber during formation of the tungsten barrier layer is in degrees Celsius less than about 225 degrees — ; and depositing a tungsten fill layer over the tungsten barrier layer to fill a feature to the first surface.
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