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Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films

机译:用于磁膜的晶片水平表征的多探针铁磁共振(FMR)装置

摘要

A ferromagnetic resonance (FMR) measurement system is disclosed with a plurality of “m” RF probes and one or more magnetic assemblies to enable a perpendicular-to-plane or in-plane magnetic field (Hap) to be applied simultaneously with a sequence of microwave frequencies (fR) at a plurality of “m” test locations on a magnetic film formed on a whole wafer under test (WUT). A FMR condition occurs in the magnetic film (stack of unpatterned layers or patterned structure) for each pair of (Hap, fR) values. RF input signals are distributed to the RF probes using RF power distribution or routing devices. RF output signals are transmitted through or reflected from the magnetic film to a plurality of “n” RF diodes where 1≤n≤m, and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening at the predetermined test locations.
机译:用多个“M”RF探针和一个或多个磁性组件公开了一种铁磁共振(FMR)测量系统,以使垂直于平面或面内磁场(HAP)与序列同时施加 在经过测试(WUT)的整个晶片上形成的多个“M”测试位置处的多个“M”测试位置处的微波频率(FR)。 对于每对(HAP,FR)值,在磁膜(无图形层或图案化结构堆叠)中发生FMR条件。 使用RF配电或路由设备将RF输入信号分布到RF探针。 RF输出信号通过磁膜传输到多个“N”RF二极管,其中1≤N≤M,并转换为控制器用于确定有效的各向异性场,线宽,阻尼系数和/ 或在预定的测试位置不均匀拓宽。

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