We have investigated the optical properties of AlN epitaxial layer grown by MOCVD using temperature-dependent photoluminescence measurements in the energy region of the band gap,with the wavelength of excitation source down to deep UV range (～177 nm).The experiments allow for observation of four different emission lines located at 5.85 eV,5.96 eV,6.06 eV and 6.125 eV,respectively at low temperature (as shown in Fig.1).
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