首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Influence of the ionizing irradiation on the basic characteristics of cooled photoresistors on the basis Cd_xHg(1-x)Te
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Influence of the ionizing irradiation on the basic characteristics of cooled photoresistors on the basis Cd_xHg(1-x)Te

机译:基于Cd_xHg(1-x)Te的电离辐射对冷却光敏电阻基本特性的影响

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摘要

The influence of the ionizing irradiation of different kind on the basic parameters, elements, designs and constructional materials of photoreceivers on the basis of Cd_xHg_(1-x)Te solid solution have been investigated. It is established, that the change of the basic parameters of the photoresistors is mainly connected with the change of properties of photosensitive elements. It has been shown that these photoreceivers may me used for operating under high irradiation conditions.
机译:在Cd_xHg_(1-x)Te固溶体的基础上,研究了不同种类的电离辐射对光接收器的基本参数,元素,设计和结构材料的影响。已经确定,光敏电阻的基本参数的变化主要与光敏元件的特性的变化有关。已经证明这些光接收器可以用于在高辐射条件下工作。

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