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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >STUDY OF POWER BALANCE IN ELECTRONEGATIVE CAPACITIVELY COUPLED PLASMAS
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STUDY OF POWER BALANCE IN ELECTRONEGATIVE CAPACITIVELY COUPLED PLASMAS

机译：电电容耦合等离子体中的功率平衡研究

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摘要

The balance of power model is a relatively simple model, which requires only the measurement of the total power and the self bias voltage. The original model does not take the effect of the plasma potential on the energy of the incoming ions into account, because, for most plasmas, the plasma potential is negligible compared with the self bias voltage. In this work, the plasma potential was taken into account. For pure SF_6 plasmas, the modification has consequences for the ion flux, which increases by more than a factor 2, and for the average energy an electron losses in the plasma, which decreases even more, when compared with the original model. Besides, there are strong indications that the silicon etching with SF_6 is mostly determined by the plasma bulk power, but that ion bombardment also influences. For the less electronegative plasmas, the influence of the plasma potential may be neglected.
机译：功率平衡模型是一个相对简单的模型，仅需要测量总功率和自偏置电压即可。原始模型没有考虑等离子体电势对入射离子能量的影响，因为对于大多数等离子体，等离子体电势与自偏压相比可忽略不计。在这项工作中，考虑了等离子体电势。对于纯SF_6等离子体，与原始模型相比，这种修改对离子通量的影响更大，离子通量的增加超过2倍，而等离子体中的电子损失对于平均能量的电子损失则减少得更多。此外，有充分的迹象表明，用SF_6进行的硅蚀刻主要由等离子体功率决定，但离子轰击也有影响。对于负电性较小的等离子体，可以忽略等离子体电势的影响。

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