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首页> 外文期刊>Plasma Sources Science & Technology >Modeling of dual frequency capacitively coupled plasma sources utilizing a full-wave Maxwell solver: II. Scaling with pressure, power and electronegativity
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Modeling of dual frequency capacitively coupled plasma sources utilizing a full-wave Maxwell solver: II. Scaling with pressure, power and electronegativity

机译：利用全波麦克斯韦求解器对双频电容耦合等离子体源进行建模：II。通过压力，功率和电负性进行缩放

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摘要

The trend in dielectric etching in microelectronics fabrication with capacitively coupled plasmas is the use of multiple frequencies where a high frequency (HF, tens to hundreds of MHz) dominates ionization and a low frequency (LF, a few to tens MHz) is used to control ion energy distributions to the wafer. Process parameters, such as pressure, gas mixture and LF and HF power deposition, are important to determining the uniformity of the plasma and properties of ions incident on the wafer. In this paper, we report on a computational investigation of the consequences of these parameters on uniformity and ion energy distributions to the wafer in a dual frequency capacitively coupled plasma reactor sustained in Ar/CF_4 gas mixtures. Due to the coupling of finite wavelength, electromagnetic skin, electrostatic edge and electronegative effects, there are no simple scaling laws for plasma uniformity. The plasma uniformity is ultimately a function of conductivity and energy relaxation distance of electrons accelerated by electric fields in and near the sheath. There is a strong second-order effect on uniformity due to feedback from the electron energy distributions (EEDs) to ionization sources. The trends from our parametric study are correlated with the spatial variation of the HF electric field, to the total power deposition and to the spatial variation of EEDs and ionization sources.
机译：具有电容耦合等离子体的微电子制造中介电刻蚀的趋势是使用多个频率，其中高频（HF，几十到几百MHz）主导电离，而低频（LF，几到几十MHz）控制离子能量分布到晶圆。诸如压力，气体混合物以及LF和HF功率沉积之类的工艺参数对于确定等离子体的均匀性以及入射在晶圆上的离子的性质非常重要。在本文中，我们报告了在Ar / CF_4气体混合物中维持的双频电容耦合等离子体反应器中，这些参数对晶片的均匀性和离子能量分布的影响的计算研究结果。由于有限波长，电磁趋肤，静电边缘和电负效应的耦合，因此没有简单的定律来控制等离子体的均匀性。等离子体均匀性最终取决于鞘内和附近电场加速的电子的电导率和能量弛豫距离。由于从电子能量分布（EED）到电离源的反馈，因此对均匀性有很强的二阶影响。我们的参数研究趋势与HF电场的空间变化，总功率沉积以及EED和电离源的空间变化相关。

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