PHOTOCONDUCTIVITY OF SEMI-INSULATING POLYSIL1CON

机译：半绝缘多晶硅的光电导率

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Semi-insulating polysilicon (SIPOS) thin films were deposited by Low Pressure Chemical Vapour Deposition (LPCVD) using different flow ratio N_2O/SiH_4 at 650 ℃. Al/SIPOS/Si capacitors were built and some of them were sintering at 430℃ in forming gas for 30 minutes. The refractive indexes ranging from 2.12 to 2.62 for as-deposited films. The photoconduction was investigated through current versus voltage analysis using white light. Experimental results show that the films are sensitive to white light and the photoconduction increase with the silicon content in the film. It was observed that the sintering decrease the sensitivity of the SIPOS films.

机译：在650℃下，采用不同流量比的N_2O / SiH_4，通过低压化学气相沉积（LPCVD）沉积半绝缘多晶硅（SIPOS）薄膜。制作了Al / SIPOS / Si电容器，其中一些在430℃的气体中烧结30分钟。沉积薄膜的折射率范围为2.12至2.62。通过使用白光的电流对电压分析来研究光电导。实验结果表明，该膜对白光敏感，并且光导率随膜中硅含量的增加而增加。观察到烧结降低了SIPOS膜的灵敏度。

著录项

来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.340-348|共9页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
Daniela Garrote Lantin; Edyr Onoda; Luis da Silva Zambom; Ronaldo Domingues;
展开▼
作者单位

Mansano FATEC-S CEETEPS, Praca Coronel Prestes, 30, CEP 01124-060, Sao Paulo, SP, Brasil;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Peculiar Photoconductivity in High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch [J] . Yuan J.Xie W.Liu H.Liu J.Li H.Wang X.Jiang W. Plasma Science, IEEE Transactions on . 2010,第12期

机译：高功率半绝缘GaAs光电导半导体开关中的特殊光电导性
2. Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC [J] . Marek Suproniuk, Mariusz Wierzbowski, Piotr Paziewski Scientific reports. . 2020,第1期

机译：发电率对半绝缘4H-SIC瞬态光电导性的影响
3. Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN [J] . Suproniuk Marek, Piwowarski Karol, Perka Bogdan, Elektronika ir Elektrotechnika . 2019,第4期

机译：基于半绝缘间隙和GaN的光电导电开关阻断特性
4. Simulation studies of persistent photoconductivity, filamentary conduction and optical pulse positioning on the high voltage response of semi-insulating GaAs photoconductive switches [C] . Joshi, R.P., Kayasit, . 1999

机译：半绝缘GaAs光电导开关的高电压响应上的持久光电导，丝状导通和光脉冲定位的仿真研究
5. The study of photoconductivity effects in semi-insulating gallium arsenide using microwave reflection technique. [D] . Wang, Ming-Shan Marshall. 1990

机译：用微波反射技术研究半绝缘砷化镓的光电导效应。
6. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts [O] . Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, 2018

机译：具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
7. Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters [O] . Salman Alfihed, Ian G. Foulds, Jonathan F. Holzman 2021

机译：半绝缘GaAs和INP光电导光器弓扎天线结构的特点
8. Simulation Studies of Persistent Photoconductivity, Filamentary Conduction and Optical Pulse Positioning on the High Voltage Response of Semi-Insulating GaAs Photoconductive Switches. [R] . Joshi, R. P., Kayasit, P., Islam, N., 1999

机译：半导体Gaas光电导开关的高电压响应持续光电导，丝传导和光脉冲定位的仿真研究。

PHOTOCONDUCTIVITY OF SEMI-INSULATING POLYSIL1CON

摘要

著录项

相似文献

相关主题

期刊订阅