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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >ANALYSIS ON GC SOI MOSFET ANALOG PARAMETERS AT HIGH TEMPERATURES
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ANALYSIS ON GC SOI MOSFET ANALOG PARAMETERS AT HIGH TEMPERATURES

机译：高温下GC SOI MOSFET的模拟参数分析

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摘要

This paper presents a comparative analysis of the behavior in high temperature operation (up to 300℃) of Graded-Channel and conventional fully depleted SOI MOSFET. The g_m/I_(DS) ratio, Early voltage, multiplication factor, parasitic bipolar transistor gain, and breakdown voltage are obtained experimentally and through two-dimensional numerical simulations. It was verified that due to the increase of the Early voltage obtained in GC devices, the low-frequency open-loop gain (A_v) is significantly larger than the conventional SOI from room to high temperature. At high temperatures the breakdown voltage in the GC devices is also higher than in the conventional SOI.
机译：本文对梯度沟道和常规的全耗尽SOI MOSFET在高温（最高300℃）下的工作性能进行了比较分析。 g_m / I_（DS）比，早期电压，倍增因数，寄生双极晶体管增益和击穿电压是通过实验和通过二维数值模拟获得的。已经证实，由于从GC设备获得的Early电压的增加，从室温到高温，低频开环增益（A_v）明显大于传统的SOI。在高温下，GC装置中的击穿电压也高于常规SOI。

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