Orientation-Dependent Anisotropic Etching Simulation in Silicon Wafer

机译：硅晶片中与方向有关的各向异性刻蚀模拟

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The anisotropic etching simulation is an important tool to fabricate sensors and actuators. The wet etching has been studied and characterized for the release of micro-mechanical structures and simulation in front side bulk micro-machining. For the orientation-dependent etching simulation processes, it is necessary the silicon etching rates determination for certain conditions, and in this work 100 silicon wafers type n, were used, etched in potassium hydroxide solution (KOH). Simulations were accomplished to verify the simulators effectiveness and to observe the planes formation in real and simulated structures.

机译：各向异性蚀刻仿真是制造传感器和执行器的重要工具。已经对湿法刻蚀进行了研究，并对湿法刻蚀进行了表征，以揭示微机械结构的释放并模拟了正面整体微加工。对于与方向有关的蚀刻模拟过程，有必要确定某些条件下的硅蚀刻速率，在这项工作中，使用了100个n型硅晶片，并在氢氧化钾溶液（KOH）中进行了蚀刻。完成仿真以验证仿真器的有效性并观察真实和仿真结构中的平面形成。

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《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.389-397|共9页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
Roberto R. Neli; Ioshiaki Doi; Renato P. Ribas; Jose A. Diniz; Jacobus W. Swart;
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作者单位

Centro de Componentes Semicondutores (CCS) -UNICAMP, C. P. 6061, CEP 13083-970, Campinas -SP;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Development of an orientation-dependent anisotropic etching simulations system MICROCAD [J] . Kazuo Sato, Kazuo Asaumi, Gen Kobayashi Electronics & Communications in Japan. 2 . 2000,第4期

机译：开发与方向相关的各向异性蚀刻模拟系统MICROCAD
2. Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton [J] . Y. Xing, M. A. Gosalvez, K. Sato, Journal of Micromechanics and Microengineering . 2010,第1期

机译：连续细胞自动机各向异性刻蚀过程中晶体硅的取向依赖性表面形态
3. Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer [J] . Eyad Abdur-Rahman, Ibrahim Alghoraibi, Hassan Alkurdi, International journal of analytical chemistry . 2017,第期

机译：异丙醇浓度及蚀刻时间对低电阻率晶体晶片湿化学各向异性蚀刻的影响
4. Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching [C] . Koide, A., Sato, . 1991

机译：取向依赖性各向异性刻蚀过程中硅的二维刻蚀轮廓的仿真
5. Anisotropic fluorocarbon plasma etching of silicon/silicon germanide heterostructures and plasma etching-induced sidewall damage [D] . Ding, Ruhang 2008

机译：硅/硅锗化物异质结构的各向异性碳氟化合物等离子体刻蚀和等离子体刻蚀引起的侧壁损伤
6. Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer [O] . Eyad Abdur-Rahman, Ibrahim Alghoraibi, Hassan Alkurdi 2017

机译：异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
7. Alkali anisotropic chemical etching of p-silicon wafer [O] . Hussien. A. Motaweh 2016

机译：P-Silicon晶片的碱各向异性化学蚀刻

Orientation-Dependent Anisotropic Etching Simulation in Silicon Wafer

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