MULTIPLE-GATE SILICON-ON-INSULATOR MOS TRANSISTORS

机译：多栅极绝缘体上硅晶体管

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To improve short-channel characteristics and increase current drive, SOI technology is shifting focus from "classical" single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single - and multiple- gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

机译：为了改善短通道特性并增加电流驱动，SOI技术将重点从“经典”单栅极MOSFET架构转移到了多栅极器件结构。本文追溯了单栅极和多栅极SOI MOSFET的历史，并总结了此类器件的电气特性。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.2-17|共16页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
Jean-Pierre Colinge;
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作者单位

Department of Electrical and Computer Engineering University of California Davis, CA 95616, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MULTIPLE-GATE SILICON-ON-INSULATOR MOS TRANSISTORS

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