MODELING AND SIMULATION OF STATIC CHARACTERISTICS OF A PMOS COMPATIBLE HOT WIRE PRINCIPLE-BASED FLOW MICRO-SENSOR

机译：基于PMOS兼容热丝原理的流动微传感器静态特性的建模与仿真

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In this paper we present a feasibility study of a PMOS compatible micromachmed flow sensor based on hot wire principle, developing a coupled thermal-electrical model and simulating its temperature profile and static characteristics. The transducer is a boron doped silicon heater resistor and the proposed process includes boron etch stop and bulk silicon micromachining techniques for achievement of the thermal isolation between the heater resistor and the silicon substrate. The main reason for developing a PMOS compatible sensor is to make it possible to fabricate a monolithic device, where the transducer and its signal conditioning and interface circuits are integrated in the same chip as a intelligent sensor.

机译：在本文中，我们基于热线原理，提出了一种与PMOS兼容的微加工流量传感器的可行性研究，开发了耦合热电模型并模拟了其温度曲线和静态特性。该换能器是硼掺杂的硅加热器电阻器，提出的工艺包括硼蚀刻停止和体硅微加工技术，以实现加热器电阻器和硅基板之间的热隔离。开发与PMOS兼容的传感器的主要原因是可以制造单片器件，其中传感器及其信号调节和接口电路与智能传感器集成在同一芯片中。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.437-444|共8页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
Adeilton C. Oliveira Junior; Ioshiaki Doi; Jose A. Diniz; Jacobus W. Swart; Eliphas W. Simoes;
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School of Electrical and Computer Engineering -UNICAMP, P.O. Box 6101, Campinas -SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MODELING AND SIMULATION OF STATIC CHARACTERISTICS OF A PMOS COMPATIBLE HOT WIRE PRINCIPLE-BASED FLOW MICRO-SENSOR

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