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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >FORMATION OF NICKEL SILICIDES ONTO (100) SILICON WAFER SURFACES USING A THIN PLATINUM INTERLAYER
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FORMATION OF NICKEL SILICIDES ONTO (100) SILICON WAFER SURFACES USING A THIN PLATINUM INTERLAYER

机译：使用薄铂金夹层在（100）硅晶片表面上形成镍硅化物

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摘要

In this work, Ni(Pt) silicides were obtained starting from Ni/Pt films deposited on (100) silicon substrate and subsequent annealing step at temperatures from 350 to 600℃ for 120 seconds in a Rapid Thermal Processing (RTP) furnace. The deposition process of a Ni(30 nm)/Pt(1.5 nm) bilayer onto Si (100) was e-beam evaporation. The Ni(Pt) silicide films were characterized by Rutherford Backscattering (RBS) spectrometry, X-Ray Diffraction (XRD) analysis. Atomic Force Microscopy (AFM) and four-probe measurements. From these characterization techniques, it was obtained crystallographic phases (XRD), surface micro-roughness (AFM) and, Ni(Pt) silicide stoichiometry and thickness by using RUMP simulations of the RBS spectra. The nickel silicide stoichiometry resulted NiSi for RTP performed at temperatures higher than 400℃ during 120 s. Also, this processing condition led to NiSi surface with low values of Root Mean Square (RMS) micro-roughness (<1.4 nm). Platinum was observed to be distributed along the NiSi film. On the other hand, XRD analysis revealed NiSi phases even for temperatures higher than 400℃ and the silicide resistivity is the lowest at 500℃ and progressively degrades for higher temperatures.
机译：在这项工作中，从沉积在（100）硅基板上的Ni / Pt膜开始，然后在快速热处理（RTP）炉中在350至600℃的温度下退火120秒，获得了Ni（Pt）硅化物。 Ni（30 nm）/ Pt（1.5 nm）双层在Si（100）上的沉积过程是电子束蒸发。通过Rutherford背散射（RBS）光谱，X射线衍射（XRD）分析对Ni（Pt）硅化物膜进行了表征。原子力显微镜（AFM）和四探针测量。通过这些表征技术，通过使用RBS光谱的RUMP模拟，获得了结晶相（XRD），表面微粗糙度（AFM）和Ni（Pt）硅化物化学计量和厚度。硅化镍化学计量法可在120 s内在高于400℃的温度下对RTP使用NiSi。同样，该处理条件导致NiSi表面的均方根（RMS）微粗糙度值较低（<1.4 nm）。观察到铂沿NiSi膜分布。另一方面，XRD分析表明，即使温度高于400℃，NiSi相也是如此；而硅化物的电阻率在500℃时最低，而在更高的温度下，硅化物的电阻率逐渐降低。

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