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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >EVALUATION OF ONO FILM DEPOSITED BY SILANE BASE SINGLE WAFER PROCESS
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EVALUATION OF ONO FILM DEPOSITED BY SILANE BASE SINGLE WAFER PROCESS

机译：硅烷基单晶片工艺沉积的ONO膜的评价

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摘要

ONO interpoly dielectrics deposited by single wafer thermal process are investigated in detail and are compared to those by batch furnace. The electrical properties was characterized in MOS capaciors. Corona charge measurement shows that ONO processed by single-wafer process chambers has larger interface trap density (D_(it)) than that of furnaces. TDDB measurement indicated that as-deposited ONO films by single wafer process is quite leaky electrically, which may be due to the existence of high defect density within the film. The oxide film density of single wafer process is speculated to be less than that of batch furnace process due to its lower wet etch rate. Breakdown voltage measurement shows that single wafer ONO processes can have comparable physical and electrical integrity with furnace process after a sufficient thermal treatment under oxidizing environment.
机译：详细研究了单晶片热处理沉积的ONO互介电介质，并将其与分批炉进行了比较。电特性以MOS电容器为特征。电晕电荷测量表明，单晶片工艺腔室处理的ONO的界面陷阱密度（D_（it））比熔炉高。 TDDB测量表明，单晶片工艺沉积的ONO薄膜在电气上相当漏电，这可能是由于薄膜内部存在高缺陷密度所致。由于单晶片工艺的氧化物膜的湿蚀刻速率较低，因此其氧化膜密度被认为小于间歇炉工艺的氧化物膜密度。击穿电压测量表明，在氧化环境下进行充分的热处理后，单晶片ONO工艺可以具有与熔炉工艺相当的物理和电气完整性。

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